Novel Crystal Technology, Inc. is a carve-out venture from Tamura and a technology transfer venture from the National Institute of Information and Communications Technology (NICT). Novel Crystal Technology, Inc. is working on the R&D of β-type gallium oxide (β-Ga2O3), a promising candidate for semiconductor material in new-generation power devices. Gallium oxide power devices with medium to high breakdown voltage are highly expected to contribute to energy saving.
β-Ga2O3 SBDs on high-quality 100-mm β-Ga2O3 epitaxial wafer
Characteristics of β-Ga2O3
is a new semiconductor material for power devices and has larger band-gap energy than SiC and GaN. Therefore, it will likely be used to make that can withstand high voltages and low resistance semiconductors. In addition, since growing β-Ga2
single crystal form a melt it is possible to provide high quality substrates with low cost compared with SiC and GaN to the market.
■Relationship between theoretical on-resistance and breakdown voltage
■Reasons for low cost of β-Ga2O3
Vapor growth method
Melt growth method
1) Power electronics
2) Devices in extreme environment
(radiation, electromagnetic waves)
3) Other applications
High sensitivity image sensors
Scintillators (medical, security)
Press release from Novel Crystal Technology, Inc.
Novel Crystal Technology, Inc.