β-Ga2O3

Novel Crystal Technology, Inc. is a carve-out venture from Tamura and a technology transfer venture from the National Institute of Information and Communications Technology (NICT). Novel Crystal Technology, Inc. is working on the R&D of β-type gallium oxide (β-Ga2O3), a promising candidate for semiconductor material in new-generation power devices. Gallium oxide power devices with medium to high breakdown voltage are highly expected to contribute to energy saving.



β-Ga2O3 SBDs on high-quality 100-mm β-Ga2O3 epitaxial wafer



Characteristics of β-Ga2O3

β-Ga2O3 is a new semiconductor material for power devices and has larger band-gap energy than SiC and GaN. Therefore, it will likely be used to make that can withstand high voltages and low resistance semiconductors. In addition, since growing β-Ga2O3 single crystal form a melt it is possible to provide high quality substrates with low cost compared with SiC and GaN to the market.

■Relationship between theoretical on-resistance and breakdown voltage

■Reasons for low cost of β-Ga2O3

SiC, GaNβ-Ga2O3
 Growth 
 rate 
Slow
Fast
 Substrate 
 process 
DifficultEasy
 Growth 
 method 

Vapor growth method
 
Melt growth method



Applications

1) Power electronics

Electric vehicles

Railroad vehicles

Renewable energy

Smart grid


2) Devices in extreme environment

Nuclear reactors
(radiation)

Space
(radiation, electromagnetic waves)


3) Other applications

High sensitivity image sensors

Scintillators (medical, security)

Ultraviolet sensors






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